532nm Microchip Laser System of ME Series
ME series microchip laser has the advantages of narrow pulse width, high peak power, good beam quality, and stable single pulse energy. Can provide a miniaturized circuit structure, low power consumption, compact size, and easy to integrate. The laser is fully sealed and protected by nitrogen, with stable performance and wide temperature.
Model | UL532-2kHz-300μJ-ME001 |
Wavelength(nm) | 532 |
Repetition frequency (KHz) | 2 |
Average power(mW) | 600 |
Output energy (μJ) | 300 |
Pulse width (ns) | 3 |
Power stability (8h) | ±3% |
Beam mode | TEM00 |
Collimating spot diameter (mm) | ≈9 |
Full divergence Angle Typ.(@1/e, mrad) | ≤1 |
Polarization characteristics | >100:1 |
Power input | 12V,>200W |
External trigger control | Gated, 5V TIL, high level enabled |
Laser head size (W×H×L, mm) | 60x39x158 |
Operating temperature (℃, need to provide air cooling heat dissipation) | 15-35 |
Storage temperature (℃) | -40~65 |
Order | |
1. The external beam expanding function can be customized to meet the requirements of small divergence Angle (beam expanding mirror magnification 5-20X). | |
2. Control the temperature of the laser head. It is recommended that the temperature of the bottom plate be within the range of 15-35 ° C |